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By: Kazi Kutubuddin Sayyad Liyakat and Heena T Shaikh.
1. Professor and Head,Department of Electronics and Telecommunication Engineering, BMIT, Solapur, India.
2. Heena T Shaikh, Department of Electronics and Telecommunication Engineering, BMIT, Solapur, India.
In the landscape of modern microelectronics, the transition from discrete sensing components to fully integrated silicon solutions have become a necessity for the advancement of the Internet of Things (IoT) and high-performance computing. This design explores the utilization of the MOSFET as a primary temperature-sensing transducer, leveraging its inherent thermal sensitivity rather than treating heat as a parasitic interference. By operating the MOSFET in the subthreshold (weak inversion) or saturation regions, this study exploits the predictable, linear relationship between temperature and key parameters such as threshold voltage (Vth) and carrier mobility (mu). The proposed sensor architecture utilizes a Proportional-To-Absolute- Temperature (PTAT) current generation technique, coupled with a high-resolution Delta-Sigma Analog-to-Digital Converter (ADC) to translate analog thermal fluctuations into precise digital data. Experimental results indicate that by harnessing the exponential sensitivity of subthreshold leakage current, the design achieves high thermal resolution within a compact nanoscale footprint. The small architecture improves reliability and scalability for advanced semiconductor applications, and the suggested design facilitates simple integration with contemporary VLSI circuits, lowering total system complexity and manufacturing costs. Additionally, the small design improves scalability and dependability for sophisticated semiconductor applications. Unlike traditional thermistors or RTDs, this MOSFET-based approach offers the dual advantages of CMOS compatibility and ultra-low power consumption, making it an ideal candidate for on- chip thermal management in SoCs (Systems-on-Chip) and wearable medical diagnostics where space and energy budgets are critically constrained.
Keywords – MOSFET, Electronic circuit, Sensors, Temperature sensor, Threshold voltage, Carrier mobility, Drain current
Citation:
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