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• Published Subscription 30 Jan 2021

  Performance Analysis of Effect of Underlap with Fixed Gate Length: GaN-based Double Gate MOSFET

  By G.M. Sharif Ullah Al-Mamun, Firuz Kabir, Md. Imran Hossain, Ashfaqur Rahman, Al Jubair Hossain, Sokhorio Margon D’Costa, Md. Rokib Hasan

  Abstract: The effect of gate length 8 nm with underlap of double gate MOSFET has been designed for VLSI Technology. The evaluation process was followed by NEGF (non-equilibrium Green’s function) formalism using SILVACO ATLAS followed to ITRS–2013. The investigations on the threshold voltage, Sub threshold Slope, ION, IOFF, ION/IOFF, DIBL and switching characteristics of the electric field have been done with the simulation results. In the simulation, adopting symmetrical distances from …

  Published in International Journal of Applied Nanotechnology · Vol. 6, Issue 2, 2020 · pp. 19–25 Read article →