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Effects of Gate Oxide Thickness and Its Dielectric Strength in WS2 Based TMDFETBy Prachi Singh, Bramha P. Pandey
Abstract: This paper presents the numerical simulation of transition metal dichalcogenide based field effect transistor (TMDFET). Here we have studied the transfer characteristic, ION/IOFF ratio, subthreshold slope of TMDFET by varying oxide thickness and its dielectric strength dependence performance. The channel material used for field effect transistor is tungsten disulfide (WS2). To calculate the transfer (input) characteristics, we use Non Equilibrium Greens Function (NEGF). Results are achieved by solving the Poisson’s …
Published in International Journal of Energetic Materials · Vol. 5, Issue 1, 2019 · pp. 14–20 Read article →