4 publications

• Published Subscription 22 Jun 2022

  Material to Scheme Designation of Flash Memory

  By B. Goswami, Deep Sen, Jaydev Banerjee, Saroj Dutta, Indira Singha, Nupur Goswami, Bhakti Bharati Mishra, Tarun Kumar Goswami, Tridib Kumar Pathak

  Abstract: Subjective has been to study schemes of flash memory achieve from devised formation from magnetic metals. Scriptive has been adhered scopes from usual study matter on magnetic optic (MO) memories. Shallow trench isolation (STI) has been usual procure of grooves on prior allowed device area i.e., before forming IC device on wafer. From where oxidation layer has grown thus electrical separation has pursued in integrated circuit (IC) liable to generate …

  Published in International Journal of Computer Aided Manufacturing · Vol. 7, Issue 2, 2021 · pp. 23–29 Read article →

• Published Subscription 3 Dec 2021

  Abrasion Resistant Produce from Slag Dust

  By Bangshidhar Goswami, Indira Singha, Jaydev Banerjee, Koushik Sanyal, Saroj Dutta

  Abstract: Steel slag is a by-product of steel manufacture such as to respect the achievement of one ton to liberate 160 kg of steel slag. Thereby chemical compounds content in slag dust of steel slag have been SiO2, CaO, Fe2O3, Al2O3, and MnO, whereas mineral components of steel slag have been C3S, C2S, C4AF, RO phase, and free-CaO. Steel slag has been applied in ceramics, road pavement materials, stockpile of mineral …

  Published in International Journal of Composite and Constituent Materials · Vol. 7, Issue 2, 2021 · pp. 1–11 Read article →

• Published Subscription 25 Nov 2021

  Nano-MOSFET ever horizon power electronics

  By Bangshidhar Goswami, Jaydev Banerjee, Tarun Kumar Goswami, Deep Sen, Koushik Sanyal

  Abstract: This article is study about characterization of miniaturized metal oxide semiconductor field effect transistor (MOSFET, MOS-FET, or MOS FET). MOSFET knew as well by metal oxide silicon transistor (MOS transistor, or MOS). Subscriptive issued has been a type of insulated-gate field effect transistor that has fabricated by controlled oxidation of a semiconductor, given by, silicon. Voltage of covered gate has determined electrical conductivity of device thereby descriptive issued as ability …

  Published in International Journal of Analog Integrated Circuits · Vol. 7, Issue 1, 2021 · pp. 25–32 Read article →

• Published Subscription 23 Oct 2021

  Mesh to Shrink in Nano Fabricated Compose

  By Bangshidhar Goswami, Indira Singha, Jaydev Banerjee

  Abstract: This article is study about shrink of polymer originated composes. Aim has been inclusive from nano- based fillers on hybridized consequence from polymeric effects. Otherwise, descriptive issues have ever arose to link accession to repair dental simulated perversions. Nanotechnology in material formulation has been production of functional structures in range of 0.1 to 100 nm. Advantages of these composites have inherent shrinkage of cure mode in accordance to monomers said …

  Published in International Journal of Applied Nanotechnology · Vol. 7, Issue 2, 2021 · pp. 1–12 Read article →