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Review on Quantum Ballistic Transport ModelBy Mayank Sharma
Abstract: Nanowire MOSFETs are perceived as a standout amongst the most encouraging possibility to expand Moore's law into nanoelectronics period. This paper audits the procedure, application, gadget material science and minimal demonstrating of Gate All around (GAA) nanowire MOSFETs. The most broadly utilized techniques for nanowire combination have been examined. The paper shows the different gadget enhancement methods and scaling capability of nanowire transistors. A process sensitivity study of silicon nanowire …
Published in International Journal of Nanomaterials and Nanostructures · Vol. 2, Issue 1, 2016 · pp. 47–49 Read article →