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Numerical Simulation of GaAs based MISFET Photo detector for Optical CommunicationBy S. Patel, P. Chakrabarti
Abstract: This paper presents a 2D numerical simulation and analysis of GaAs based MISFET photo detector. Numerical simulation of the performance of the device in dark and illuminated condition has been performed. Drain current increases with wavelength of operation and attains maximum value at 0.65 micron and there is a sharp fall beyond 0.85 micron which is higher cut off wavelength for the proposed structure. The device exhibits very low dark …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 2, Issue 1, 2016 · pp. 17–30 Read article →