Photon activated tunneling in ABO3 type Multiferroic domain wall

Gizachew Diga Milki

International Journal of Composite and Constituent Materials

Photon activated tunneling in ABO3 type Multiferroic domain wall

Gizachew Diga Milki

Abstract

We present photon assisted tunneling in multiferroics of type ABO3. It is seen that the interactions of photons with this analytic molecule accelerate the electron transmissions. It is clarified that the existence of ferromagnetic, ferroelectric, and piezoelectric in multiferroic materials are consequence of magnetic anisotropy, dipole segregation and strain. The effect of photon is therefore, to disassemble existing electronic states or assemblesto form new electronic states by enhancing its transmission rates. On the other hand, photons with definite frequency are expected to overcome, the Vander Waals interactions. It is expected that photon assisted tunneling/hopping will cause an electric dipole separation. Hence photon assisted tunneling in multferroic domain walls will be dealt.

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Photon activated tunneling in ABO3 type Multiferroic domain wall

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