International Journal of Microelectronics and Digital integrated circuits
Equivalent Circuits For High Frequency Bipolar Transistors
Abstract
Two types of equivalent circuits were considered to represent small signal/linear bipolar transistor behaviour at high frequencies. Elements/Parameters of the equivalent circuits are extracted from measured S parameters using gradient method by Fletcher-Powell. Exact gradients of S parameters were determined by using gradient conversion matrix formula between two-port open circuit impedance parameters and two port scattering parameters. Good agreement between measured and simulated all the four two port S parameters were obtained for both the circuit configurations.References (12)
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