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2 articles for “GaN/AlGaN”
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Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm
Abstract: In this work, we have studied the electrical characteristics of single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs). The effects of drain voltage and gate voltage on variations of drain current have studied on the basis of simulated HEMT structures. Also, we have studied the effects of aluminium mole fraction, gate length and doping concentration on variations of drain current based on the simulated HEMT structures. This present work will be …
Published in International Journal of Applied Nanotechnology · Vol. 5, Issue 2, 2019 · pp. 26–38 Read article
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Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm
Abstract: In this work, we have designed total 25 individual structures of AlGaN/GaN high electron mobility transistors (HEMTs). Variations in drain current are studied with the change in drain voltage. Also, variations in drain current are studied with the change in gate voltage. Further, variations in drain current are studied with the change in aluminium mole fraction. The amount of drain current is higher in HEMT of lower gate length. This …
Published in International Journal of Nanomaterials and Nanostructures · Vol. 6, Issue 1, 2020 · pp. 14–28 Read article