high-energy ion implantation
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Study and Simulation of Radiation Effects on MOS Structures through High Energy Ions
Abstract: MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm 2 and 1010 cm 2 were investigated by capacitance measuring methods (C–V, C–t), completed by quasistatic low-frequency C–V and DLTS measurements. The irradiated MOS structures were functional in spite of a high density of radiation defects. The electric activity of the defects brought a sharp decrease in the generation parameters tr and …
Published in International Journal of Applied Nanotechnology · Vol. 3, Issue 2, 2017 · pp. 40–46 Read article