High-Performance FinFET Based 8T SRAM with Enhanced Performance Parameters Using Self-Controllable Voltage level (SVL) Technique

Nikhil Saxena; Vaibhav Shrivastava

International Journal of Microelectronics and Digital integrated circuits

High-Performance FinFET Based 8T SRAM with Enhanced Performance Parameters Using Self-Controllable Voltage level (SVL) Technique

Nikhil Saxena ✉
Vaibhav Shrivastava

Abstract

The scaling of standard single-gate bulk CMOS faces great challenge in the nanometer regime due to the severe short-channel effects (SCE) which causes significant increase in the leakage current. In this paper, a high-performance eight transistor (8T) SRAM has been proposed for reduction in leakage current and power consumption using double-gate FinFET with the proposed technique. Double gate FinFET has better SCEs performance compared to conventional CMOS. In this paper, a low-power 8T SRAM cell is designed with self-controllable voltage level (SVL) circuit for providing low power consumption and high performance. A self-controllable voltage level circuit can supply a maximum dc voltage when the load circuits are in active mode and it can also decrease the voltage supplied to a load circuit when the load circuit is in standby mode. This proposed technique significantly reduces the leakage current at a supply voltage of 0.9 V with a leakage reduction of value 0.46 nA in the leakage current of the circuit and provides high-performance SRAM cell. The following simulations have been done on SPICE tool on 32 nm technology. Keywords: FinFET, CMOS, SCE, SRAM, SVL

Full text

The full text of this article is available to subscribers.

On a subscribing campus you are let in by network address, with no login at all.

One-off purchase. Permanent access to this article, no account needed.

A year of online access to every article in International Journal of Microelectronics and Digital integrated circuits. Or choose several journals →

How to cite

Nikhil Saxena, Vaibhav Shrivastava. High-Performance FinFET Based 8T SRAM with Enhanced Performance Parameters Using Self-Controllable Voltage level (SVL) Technique. International Journal of Microelectronics and Digital integrated circuits. 2019;5(1):16–24.

Download the citation:

High-Performance FinFET Based 8T SRAM with Enhanced Performance Parameters Using Self-Controllable Voltage level (SVL) Technique

Abstract

Read more of it

Publish your article

Abstract

Related articles

Brain-Inspired Computing: The Rise of Neuromorphic AI

An Energy-Efficient CMOS Analog Front-End for Wearable Biomedical Monitoring Applications

Design and Implementation of 32-Bit High Speed Vedic Multiplier

IMPLEMENTATION OF VOTING MACHINE TO AVOID RIGGING USING VERILOG HDL

Microelectronics: Reach, Functions, and Worldwide Effects

Design of Real-Time Candy Vending Machine Using Verilog HDL

Read more of it

Publish your article