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10 articles for “switching characteristics”
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Performance Analysis of Effect of Underlap with Fixed Gate Length: GaN-based Double Gate MOSFET
Abstract: The effect of gate length 8 nm with underlap of double gate MOSFET has been designed for VLSI Technology. The evaluation process was followed by NEGF (non-equilibrium Green’s function) formalism using SILVACO ATLAS followed to ITRS–2013. The investigations on the threshold voltage, Sub threshold Slope, ION, IOFF, ION/IOFF, DIBL and switching characteristics of the electric field have been done with the simulation results. In the simulation, adopting symmetrical distances from …
Published in International Journal of Applied Nanotechnology · Vol. 6, Issue 2, 2020 · pp. 19–25 Read article
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An Overview of RF MEMS Components by Microwave Theory and Techniques
Abstract: This paper offers with a rather new location of radio-frequency (RF) technology primarilybased on microelectromechanical systems (MEMS). RF MEMS gives a class of new devicesand components which show advanced high-frequency performance relative to standard(commonly semiconductor) gadgets, and which enable new device abilities. Further, MEMSgadgets are designed and fabricated by means of techniques much like those of very massive-scale integration, and may be synthetic through traditional batch-processing strategies. Inthis paper, the …
Published in International Journal of Analog Integrated Circuits · Vol. 6, Issue 1, 2020 · pp. 53–60 Read article
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Optical Sensor of Switched Reluctance Motor
Abstract: The objective of this study is to describe the importance of optical sensor in switched reluctance motor. It is used for turning on and off angles, as well as for turning on pulling the rotor to it. The optical sensor provides reliable rotor positions. The position measurements depend on the conditions of the operational environments. Optical sensor with robust structure and basic electromagnetic characteristics of a switched reluctance motor, can …
Published in International Journal of Electrical Power System and Technology · Vol. 5, Issue 2, 2019 · pp. 30–34 Read article
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A Critical Review of Harmonics and Mitigation Techniques in Power Systems
Abstract: The application of nonlinear loads in electrical power systems has increased significantly in recent years. These include variable speed drives (VSDs), uninterruptible power supplies (UPS), industrial rectifiers, welding machines, fluorescent lighting systems (Electronic ballast), computers, electronic appliances and other equipment with switched mode power supplies (SMPS) all of which have nonlinear voltage-current characteristics and produce harmonic distortions on the power system. Power system reliability and normal operation of electrical equipment …
Published in International Journal of Electrical Power System and Technology · Vol. 5, Issue 1, 2019 · pp. 1–15 Read article
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A Review on Different Single Electron Devices and Their Comparative Study
Abstract: Single Electron Devices being one of the nanodevices offers reduced feature size and low power consumption along with unique characteristics. The principle of operation is established upon the quantum mechanical tunneling of a single or few electrons for device switching between conducting and non-conducting state. The present work is a detailed survey on the different Single Electron Devices such as Single Electron Box, Double Tunnel Junction, Single Electron Transistor and …
Published in International Journal of Digital Communication and Analog Signals · Vol. 6, Issue 2, 2020 · pp. 21–27 Read article
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STUDY AND IMPLEMENTATION OF INP MIS STRUCTURE AND GaAs FET DEVICES for ELECTRIC CONTROL APPLICATIONS.
Abstract: Compound semiconductors are well known for its high speed due to its higher mobility. Indium Phosphide and Gallium Arsenide are the compound semiconductor material considered in this paper for its study and characterization. Indium Phosphide MIS devices can be fabricated and its characteristics are studied. Here Indium Phosphide MIS capacitor is used as test vehicle for fabrication of other MIS devices. We noted down its breakdown voltage and leakage current. …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 2, Issue 2, 2016 · pp. 25–31 Read article
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Efficiency of Super Heterodyne Fabricated Matter
Abstract: Nano fabrication efficacy has been efficient features to the system of Bluetooth low energy (BLE) from assigned overcome from discrete-time (DT) superheterodyne receiver (RX). Additional characteristic of DT-RX system is for applicability to internet-of-things (IoT), commercial Bluetooth and 2G cellular radios, while alternative to software-defined radio applicability. Implicative produce has furnished evolve of programmable capacitor for switched-capacitor (SC) structure. Program has added to flex digitally intensive scriptive system, which has …
Published in International Journal of Microelectronics and Digital integrated circuits · Vol. 7, Issue 2, 2021 · pp. 1–8 Read article
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Analysis of Prefluxing Method for Transformer Inrush Current Reduction
Abstract: Inrush Current is a harmonic-rich current which flows in transformer when it is energized. Inrush current affect the winding of transformer by means of its structural deformation, induce the voltage distortion, and reduce the power quality. There are number of methods available for transformer inrush current’s reduction. Among them, the latest and emerging method is the prefluxing method. In this paper, same has been explained with its results of simulations …
Published in International Journal of Power Electronics Controllers and Converters · Vol. 8, Issue 1, 2022 Read article
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Faults in On-Load Tap Changer of a Transformer: An Innovative Approach to Mechanical Fault Diagnosis
Abstract: On-load tap changer (OLTC) is very important for maintaining or regulating output voltage, but it has moving contact & complex switching mechanisms which contributes to the failure of on-load tap changer. Faults in OLTC such as Coking Contact wear and damaged transition resistors significantly reduce reliability of transformers which may lead to catastrophic failures of transformers. There are some traditional approaches for diagnostics of OLTC, such as Static Resistance Measurements, …
Published in International Journal of Electrical Power System and Technology · Vol. 12, Issue 2, 2026 Read article
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High-k and Low-k Gate Dielectric Stacking for Low Voltage Organic Thin Film Transistors
Abstract: Electrical performance parameters of Organic thin film transistor (OTFT) are closely related to the interface characteristics of gate dielectric and organic semiconductor film. Henceforth, it becomes important to study the effect of gate dielectric stacking on device performance of OTFTs. In this paper, we demonstrate the stacking of high-k and low-k gate dielectric based Single and Dual gate OTFTs. The structural effect of Organic thin film transistors is methodically explored …
Published in International Journal of Applied Nanotechnology · Vol. 5, Issue 1, 2019 · pp. 1–7 Read article